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august 2014 docid026762 rev 1 1/23 stb6n65m2, STD6N65M2 n-channel 650 v, 1.2 ? typ., 4 a mdmesh? m2 power mosfets in d 2 pak and dpak packages datasheet - preliminary data figure 1. internal schematic diagram features ? extremely low gate charge ? excellent output capacitance (c oss ) profile ? 100% avalanche tested ? zener-protected applications ? switching applications description these devices are n-channel power mosfets developed using mdmesh? m2 technology. thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. 1 3 tab dpak d pak 2 1 3 tab am15572v1 , tab order codes v ds r ds(on) max i d stb6n65m2 650 v 1.35 ? 4 a STD6N65M2 table 1. device summary order codes marking package packaging stb6n65m2 6n65m2 d 2 pak tape and reel STD6N65M2 dpak www.st.com
contents stb6n65m2, STD6N65M2 2/23 docid026762 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 d 2 pak, stb6n65m2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2 dpak, STD6N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
docid026762 rev 1 3/23 stb6n65m2, STD6N65M2 electrical ratings 23 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 4 a i d drain current (continuous) at t c = 100 c 2.5 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 16 a p tot total dissipation at t c = 25 c 60 w dv/dt (2) 2. i sd 4 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd =400 v peak diode recovery voltage slope 15 v/ns dv/dt (3) 3. v ds 520 v mosfet dv/dt ruggedness 50 t stg storage temperature -55 to 150 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit d 2 pak dpak r thj-case thermal resistance junction-case max 2.08 c/w r thj-pcb thermal resistance junction-pcb max (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board 30 50 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 0.5 a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 100 mj
electrical characteristics stb6n65m2, STD6N65M2 4/23 docid026762 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 650 v i dss zero gate voltage drain current v gs = 0, v ds = 650 v 1 a v gs = 0, v ds = 650 v, t c =125 c 100 a i gss gate-body leakage current v ds = 0, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 2 a 1.2 1.35 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 100 v, f = 1 mhz -226-pf c oss output capacitance - 12.8 - pf c rss reverse transfer capacitance -0.65-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 520 v - 114 - pf r g intrinsic gate resistance f = 1 mhz open drain - 6.5 - ? q g total gate charge v dd = 520 v, i d = 4 a, v gs = 10 v (see figure 6 ) -9.8-nc q gs gate-source charge - 1.7 - nc q gd gate-drain charge - 4 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 325 v, i d = 2 a, r g = 4.7 , v gs = 10 v (see figure 13 and figure 18 ) -19-ns t r rise time - 7 - ns t d(off) turn-off delay time - 6.5 - ns t f fall time - 20 - ns
docid026762 rev 1 5/23 stb6n65m2, STD6N65M2 electrical characteristics 23 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 4 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 16 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 4 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 4 a, di/dt = 100 a/s v dd = 60 v (see figure 15 ) - 260 ns q rr reverse recovery charge - 1.2 c i rrm reverse recovery current - 9.2 a t rr reverse recovery time i sd = 4 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 15 ) - 400 ns q rr reverse recovery charge - 1.84 c i rrm reverse recovery current - 9.1 a
electrical characteristics stb6n65m2, STD6N65M2 6/23 docid026762 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq ?v pv ?v 7m ?& 7f ?& 6lqjohsxovh pv *,3*6$ , ' 9 '6 9 $ 9 9 *6 9 9 9 *,3*6$ , ' 9 *6 9 $ 9 '6 9 *,3*6$ figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance 9 *6 4 j q& 9 9 '' 9 , ' $ 9 '6 9 '6 9 *,3*6$ 5 '6rq , ' $ 9 *6 9 *,3*6$
docid026762 rev 1 7/23 stb6n65m2, STD6N65M2 electrical characteristics 23 figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on-resistance vs temperature figure 11. normalized v (br)dss vs temperature figure 12. source-drain diode forward characteristics & 9 '6 9 s) &lvv &rvv &uvv *,3*6$ 9 *6wk 7 - ?& qrup , ' ?$ *,3*6$ 5 '6rq 7 - ?& qrup 9 *6 9 *,3*6$ 9 %5'66 7 - ?& qrup , ' p$ *,3*6$ 9 6' , 6' $ 9 7 - ?& 7 - ?& 7 - ?& *,3*6$
test circuits stb6n65m2, STD6N65M2 8/23 docid026762 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid026762 rev 1 9/23 stb6n65m2, STD6N65M2 package mechanical data 23 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data stb6n65m2, STD6N65M2 10/23 docid026762 rev 1 4.1 d 2 pak, stb6n65m2 figure 19. d2pak (to-263) drawing 0079457_t
docid026762 rev 1 11/23 stb6n65m2, STD6N65M2 package mechanical data 23 table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data stb6n65m2, STD6N65M2 12/23 docid026762 rev 1 figure 20. d2pak footprint (a) a. all dimension are in millimeters 16.90 12.20 9.75 3.50 5.08 1.60 footprint
docid026762 rev 1 13/23 stb6n65m2, STD6N65M2 package mechanical data 23 4.2 dpak, STD6N65M2 figure 21. dpak (to-252) type a drawing b3
package mechanical data stb6n65m2, STD6N65M2 14/23 docid026762 rev 1 table 10. dpak (to-252) type a mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1.00 1.50 (l1) 2.80 l2 0.80 l4 0.60 1.00 r0.20 v2 0 8
docid026762 rev 1 15/23 stb6n65m2, STD6N65M2 package mechanical data 23 figure 22. dpak (to-252) type a footprint (b) b. all dimensions are in millimeters )3b3
package mechanical data stb6n65m2, STD6N65M2 16/23 docid026762 rev 1 figure 23. dpak (to-252) type c drawing b3bw\shb&
docid026762 rev 1 17/23 stb6n65m2, STD6N65M2 package mechanical data 23 table 11. dpak (to-252) type c mechanical data dim. mm min. typ. max. a2.202.302.38 a1 0.90 1.01 1.10 a2 0.00 0.10 b0.72 0.85 b4 5.13 5.33 5.46 c0.47 0.60 c2 0.47 0.60 d6.006.106.20 d1 5.25 e6.506.606.70 e 2.186 2.286 2.386 e1 4.70 h 9.80 10.10 10.40 l1.401.501.70 l2 0.90 1.25 l3 0.51 bsc l4 0.60 0.80 1.00 l6 1.80 bsc 1579 2579 v2 0 8
package mechanical data stb6n65m2, STD6N65M2 18/23 docid026762 rev 1 figure 24. dpak (to-252) type c footprint (c) c. all dimensions are in millimeters )rrwsulqwb5(9b3
docid026762 rev 1 19/23 stb6n65m2, STD6N65M2 packaging mechanical data 23 5 packaging mechanical data figure 25. tape p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape
packaging mechanical data stb6n65m2, STD6N65M2 20/23 docid026762 rev 1 table 12. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
docid026762 rev 1 21/23 stb6n65m2, STD6N65M2 packaging mechanical data 23 figure 26. reel table 13. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at sl ot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history stb6n65m2, STD6N65M2 22/23 docid026762 rev 1 6 revision history table 14. document revision history date revision changes 04-aug-2014 1 first release.
docid026762 rev 1 23/23 stb6n65m2, STD6N65M2 23 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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